| PART |
Description |
Maker |
| SMHF2815D SMHF2805S SMHF2812S SMHF283R3S SMHF2812D |
Fully qualified to Class H or K -55掳C to 125掳C operation 16 to 40 VDC input
Fully qualified to Class H or K -55°C to 125°C operation 16 to 40 VDC input
|
Interpoint Corporation Company
Interpoint Corporation ...
|
| AS6C4008A |
Fully static operation
|
Alliance Semiconductor ...
|
| MS68941 |
Mono 1.1W, Fully Differential Input Excellent PSRR, Low Voltage Operation Selectable Shutdown Logic Level
|
MOSA ELECTRONICS
|
| S10317-01 S10317 |
Photo IC for laser beam synchronous detection Low voltage operation (3.3 V)
|
Hamamatsu Corporation
|
| S10317-01 |
Photo IC for laser beam synchronous detection Low voltage operation (3.3 V)
|
Hamamatsu Photonics
|
| LTC3442EDE |
Micropower Synchronous Buck-Boost DC/DC Converter with Automatic Burst Mode Operation
|
Linear Technology
|
| UPD4482321GF-A65 UPD4482321GF-A85 UPD4482321GF-C85 |
(UPD4482161/2181/2321/2361) 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
|
NEC[NEC]
|
| UPD4482162 UPD4482182 UPD4482162GF-A60 UPD4482162G |
8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT 800万位CMOS同步快速静态存储器流水线操作单周期取消选择
|
NEC Corp.
NEC, Corp.
|
| EM488M1644VTG-7F |
Fully Synchronous to positive clock edge
|
Eorex Corporation
|
| GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM
133MHz 1M x 18 synchronous SRAM
150MHz 1M x 18 synchronous SRAM
166MHz 1M x 18 synchronous SRAM
200MHz 1M x 18 synchronous SRAM
225MHz 1M x 18 synchronous SRAM
250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|
